Ionization dilatation effects in fused silica from 2 to 18-keV electron irradiation
Description
We have used low-energy electron irradiations in conjunction with a bending-cantilever-plate technique to investigate the volume dilatations produced by ionization effects in fused silica. Our irradiations generally cause compaction in agreement with previous data from high-energy electron irradiations, but we consistently observe a slowly saturating compaction-dose relationship rather than the sublinear power-law relationship seen in the high-energy data. Our results show agreement with the apparent ionization compaction effect extracted from low-dose-rate 1H+-ion-implantation experiments. We find no dose-rate dependence in the electron ionization compaction effect, in marked contrast with the apparent ionization compaction effect in the implantation experiments. We therefore conclude that the enhancement of the apparent ionization compaction effect at high dose rates in the implantation experiments results from an interaction between the ionization and the atomic displacements accompanying the implanation. By probing to various depths at a constant dose and dose rate, we find that the electron irradiation compaction effect is generally enhanced within several hundred angstroms of the sample surface. There is no apparent threshold for onset of the compaction mechanism for incident electron energies between 2.2 and 18 keV. Finally, we observe the low-fluence expansion effect in impure fused silica as seen by other workers but establish here that it is primarily an ionization-stimulated phenomenon that occurs only when the irradiation current varies with time.
Additional details
Additional titles
- Augmented title (English)
- Compaction-dose relationship, expansion effect
Identifiers
- DOI
- 10.1063/1.1663878;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 45
- Journal Issue
- 9
- Series
- J. Appl. Phys.
- Journal Page Range
- 3876-3882
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 6160314
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPACTING; DOSE RATES; DOSE-RESPONSE RELATIONSHIPS; ELECTRON BEAMS; IONIZATION; IRRADIATION; KEV RANGE; PHYSICAL RADIATION EFFECTS; SILICON OXIDES
- Descriptors DEC
- BEAMS; CHALCOGENIDES; ENERGY RANGE; FABRICATION; LEPTON BEAMS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; RADIATION EFFECTS; SILICON COMPOUNDS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent