Published January 15, 2003 | Version v1
Journal article

High resolution static SIMS imaging by time of flight SIMS

Description

TOF-SIMS (TOF: time of flight) imaging has been widely used in many laboratories for surface characterization purposes as well as an actual problem solving tool. In this paper, to optimize the quality of TOF-SIMS imaging, we investigated the instrumental variables, which include the ion beam pulse width, the ion beam current, the use of beam bunching, and the primary ion beam species. These experimental parameters will determine the special resolution, sensitivity, and mass resolution

Additional details

Identifiers

PII
S0169433202008346;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
203-204
Journal Issue
1-4
Journal Page Range
p. 818-824
ISSN
0169-4332
CODEN
ASUSEE

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38069790
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BEAM BUNCHING; ION BEAMS; ION MICROPROBE ANALYSIS; MASS RESOLUTION; MASS SPECTROSCOPY; SENSITIVITY; TIME-OF-FLIGHT METHOD
Descriptors DEC
BEAM DYNAMICS; BEAMS; CHEMICAL ANALYSIS; DYNAMICS; MECHANICS; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; RESOLUTION; SPECTROSCOPY

Optional Information

Copyright
Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.