Published January 15, 2003
| Version v1
Journal article
High resolution static SIMS imaging by time of flight SIMS
Description
TOF-SIMS (TOF: time of flight) imaging has been widely used in many laboratories for surface characterization purposes as well as an actual problem solving tool. In this paper, to optimize the quality of TOF-SIMS imaging, we investigated the instrumental variables, which include the ion beam pulse width, the ion beam current, the use of beam bunching, and the primary ion beam species. These experimental parameters will determine the special resolution, sensitivity, and mass resolution
Additional details
Identifiers
- PII
- S0169433202008346;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 203-204
- Journal Issue
- 1-4
- Journal Page Range
- p. 818-824
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38069790
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BEAM BUNCHING; ION BEAMS; ION MICROPROBE ANALYSIS; MASS RESOLUTION; MASS SPECTROSCOPY; SENSITIVITY; TIME-OF-FLIGHT METHOD
- Descriptors DEC
- BEAM DYNAMICS; BEAMS; CHEMICAL ANALYSIS; DYNAMICS; MECHANICS; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; RESOLUTION; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.