Published 1996 | Version v1
Miscellaneous Metadata-only

High resolution PITS studies of deep-level defects in semi-insulating GaAs and InP

Creators

  • 1. Institute of Electronic Materials Technology, Warsaw (Poland)
  • 2. Military University of Technology, Warsaw (Poland)

Description

no abstract available

Part of:
Abstracts of 12. Conference on Solid State Crystals Materials Science and Applications

Additional details

Publishing Information

Imprint Title
Abstracts of 12. Conference on Solid State Crystals Materials Science and Applications
Imprint Pagination
[O 1-52; A 1-25; B 1-35; C 1-37; D 1-31]
Journal Page Range
p. C-11

Conference

Title
12. Conference on Solid State Crystals Materials Science and Applications
Dates
7-11 Oct 1996
Place
Zakopane (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
30020229
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE; ENERGY LEVELS; GALLIUM ARSENIDES; INDIUM PHOSPHIDES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MAGNETIC RESONANCE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RESONANCE

Optional Information