Electrical characterization of defects introduced during electron beam deposition of Pd Schottky contacts on n-type Ge

We have investigated by deep level transient spectroscopy the hole and electron trap defects introduced in n-type Ge during electron beam deposition (EBD) of Pd Schottky contacts. We have also compared the properties of these defects with those introduced in the same material during high-energy electron irradiation. Our results show that EBD introduces several electron and hole traps at and near the surface of Ge. The main defect introduced during EBD has electronic properties similar to those of the V-Sb complex, or E center, introduced during high-energy particle irradiation of Ge. This defect has two levels E0.38 and H0.30 that correspond to its (--,-) and (-,0) charge states