Published March 15, 2005 | Version v1
Journal article

Ferroelectric properties of bulk and thin films of PMNT system

  • 1. Department of Physics, Indian Institute of Technology, New Delhi-110016 (India)
  • 2. Electroceramics Group, Solid State Physics Laboratory, Lucknow Road, Delhi-110054 (India)
  • 3. BITS Pilani-Goa Campus, Goa-403726 (India)

Description

Perovskite phase development study for bulk and thin films of PMNT 68/32 composition was carried out. B-site Columbite precursor technique was used for bulk system preparation whereas, sol-gel technique was used for thin film deposition on ITO coated glass substrates. Approximately 100% and 95% perovskite phase with grains of micron and sub-micron sizes were observed in bulk and thin films, respectively. Curie transition temperature, T c, for bulk and thin films were ∼150 deg. C and 190 deg. C, respectively. Polarization vs. electric field, P-E, hysteresis loops of PMNT 68/32 bulk and thin films showed remnant polarization, P r, ∼21.67 μC/cm2 and 1.1 μC/cm2 and coercive fields, E c, ∼3.9 and 7.7 kV/cm, respectively. Strain vs. electric field, S-E, behavior of PMNT 68/32 bulk ceramic showed piezoelectric nature of the material with a high value of maximum strain ∼1% at 19 kV/cm

Additional details

Identifiers

DOI
10.1016/j.physb.2004.07.023;
PII
S0921-4526(04)00847-6;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
357
Journal Issue
3-4
Journal Page Range
p. 241-247
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.