Effect of the process of radiation-induced defect formation on diffusion profile of aluminium distribution in silicon under electron irradiation

On the basis of interstitial mechanism Al redistribution in Si under electron irradiation (E=1.8-3.2 MeV) at T≤60 deg C after formation of p-n-structure by Al thermal diffusion is considered. In analysis of Al redistribution at the boundary of silicon structures p-n junctions after electron irradiation suppositions on high diffusion coefficient of Al interstitial as well as the fact, that Si interstitials and vacancies are more mobile than Al atoms, are used. It is shown that the main contribution to increase of reverse breakdown voltage under electron irradiation is made by levelling of nonuniform distribution of duffusant at p-n junction interface