Published June 16, 1979 | Version v1
Journal article Metadata-only

Study of microplasma breakdown by means of a modulation method

Creators

  • 1. AN Ukrainskoj SSR, Kiev. Inst. Poluprovodnikov
  • 2. AN Ukrainskoj SSR, Kiev. Inst. Fiziki

Description

Changes in concentration and defect distribution due to 60Co γ-irradiation may lead to changes in the microplasma structure of the breakdown region in semiconductor diodes. The fine structure of I-U characteristics has been investigated by means of sinusoidal modulation of the potential. Schottky barrier Pt-n-GaAs diodes and p-Ge-n-GaAs diodes were investigated at 300, 77, and 4.2 K

Additional details

Publishing Information

Journal Title
Phys. Status Solidi A
Journal Volume
53
Journal Issue
2
Series
Phys. Status Solidi A.
Journal Page Range
K153-K156
ISSN
0031-8965

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
11497951
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
BREAKDOWN; COBALT 60; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; EXPERIMENTAL DATA; GAMMA RADIATION; GRAPHS; MODULATION; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SOLID-STATE PLASMA
Descriptors DEC
BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; CRYSTAL STRUCTURE; DATA; DATA FORMS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; INFORMATION; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MINUTES LIVING RADIOISOTOPES; NUCLEI; NUMERICAL DATA; ODD-ODD NUCLEI; PHYSICAL PROPERTIES; PLASMA; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; YEARS LIVING RADIOISOTOPES

Optional Information

Notes
Short note.