Published August 12, 2016 | Version v1
Journal article

Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core–shell (In,Ga)N/GaN rod light-emitting diodes

  • 1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin (Germany)
  • 2. European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex (France)
  • 3. Institute of Semiconductor Technology, Braunschweig University of Technology, Hans-Sommer-Straße 66, D-38106 Braunschweig (Germany)

Description

Employing nanofocus x-ray diffraction, we investigate the local strain field induced by a five-fold (In,Ga)N multi-quantum well embedded into a GaN micro-rod in core–shell geometry. Due to an x-ray beam width of only 150 nm in diameter, we are able to distinguish between individual m-facets and to detect a significant in-plane strain gradient along the rod height. This gradient translates to a red-shift in the emitted wavelength revealed by spatially resolved cathodoluminescence measurements. We interpret the result in terms of numerically derived in-plane strain using the finite element method and subsequent kinematic scattering simulations which show that the driving parameter for this effect is an increasing indium content towards the rod tip. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/27/32/325707

Additional details

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
27
Journal Issue
32
Journal Page Range
[8 p.]
ISSN
0957-4484