Published September 1992
| Version v1
Journal article
Single crystal silicon used in detectors and its relation to devices
Creators
Description
The manufacturing technology of single crystal silicon used in detectors is studied. It is discovered that the tiny microdefects in single crystal silicon are the key parameter which affects manufacturing detectors and its function
Additional details
Publishing Information
- Journal Title
- Nuclear Electronics and Detection Technology
- Journal Volume
- 12
- Journal Issue
- suppl.
- Series
- Proceedings of 6th national coference on nuclear electronics and nuclear detection technology (A).
- Journal Page Range
- p. 260-266, 337.
- ISSN
- 0258-0934
- CODEN
- HDYUEC
Conference
- Title
- 6. national conference on nuclear electronics and nuclear detection technology.
- Dates
- 21-26 Sep 1992.
- Place
- Weihai (China).
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 26011795
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; DRAWING; FABRICATION; MONOCRYSTALS; PERFORMANCE; SI SEMICONDUCTOR DETECTORS; SILICON
- Descriptors DEC
- CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; HEAT TREATMENTS; MATERIALS WORKING; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS