Published June 1996 | Version v1
Journal article Metadata-only

Microgap gas chamber studies

Creators

  • 1. Lawrence Berkeley National Lab., CA (United States)
  • 2. Univ. of California, Berkeley, CA (United States)

Description

Hydrogenated amorphous silicon carbide (a-Si:C:H) has been used as an insulating support pedestal for the anode strip in microgap gas chambers (MGCs) in an attempt to make a thicker high quality insulating layer. MGCs having 2.3 or 4.6 microm thick a-Si:C:H and 2.0 microm thick SiO2 insulating layers have been built and tested. In this paper, the results of gas gains, strip damage by discharges, and preliminary aging studies are presented

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
43
Journal Issue
3Pt2
Journal Page Range
p. 1227-1231.
ISSN
0018-9499
CODEN
IETNAE

Conference

Title
IEEE nuclear science symposium and medical imaging conference.
Dates
23-28 Oct 1995.
Place
San Francisco, CA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
27075840
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
DESIGN; ELECTRICAL INSULATION; EXPERIMENTAL DATA; PERFORMANCE TESTING; POSITION SENSITIVE DETECTORS; PROPORTIONAL COUNTERS; SILICON OXIDES
Descriptors DEC
CHALCOGENIDES; DATA; INFORMATION; MEASURING INSTRUMENTS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; RADIATION DETECTORS; SILICON COMPOUNDS; TESTING

Optional Information

Secondary number(s)
CONF-951073--.