Published 1975
| Version v1
Book
Study of hydrogen implantation in silicon
Creators
- 1. CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France). Lab. de Physique du Solide
- 2. Centre National d'Etudes des Telecommunications (CNET), Centre de Recherches de Lannion, 22 (France)
Description
The main parameters relative to low-energy hydrogen implantation in a silicon substrate were determined using the 1793 keV resonance of the 1H(11B,α)αα reaction and the backscattering of the channelized He+ ions. The implantated proton and defect creation distribution was measured, together with the stopping power of low-energy protons and of boron ions around 2MeV. The annealing of implanted layers was studied and the method shown to be well suited to localization research
Abstract (French)
L'utilisation de la resonance a 1793keV de la reaction 1H(11B,α)αα et de la retrodiffusion des He+ canalises, nous a permis de determiner les principaux parametres concernant l'implantation d'hydrogene, a basse energie, dans un substrat de silicium. Nous avons mesure la distribution des protons implantes et des defauts crees ainsi que le pouvoir d'arret des protons de basse energie et du bore d'environ 2MeV. Nous avons etudie le recuit des couches implantees et montre que la methode etait bien adaptee aux etudes de localisationAdditional details
Additional titles
- Original title (French)
- Etude de l'implantation de l'hydrogene dans le silicium
Publishing Information
- Publisher
- Institut National des Sciences et Techniques Nucleaires.
- Imprint Place
- Saclay, France
- Imprint Title
- Meeting on particle channeling. Description and applications. Saclay, 27-31 May 1974
- Imprint Pagination
- p. 263-291.
Conference
- Title
- Meeting on particle channeling.
- Dates
- 27 May 1974.
- Place
- Saclay, France.
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 6216219
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; ENERGY LOSSES; HYDROGEN IONS; ION BEAMS; ION IMPLANTATION; SILICON; SPATIAL DISTRIBUTION; STOPPING POWER
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTS; HEAT TREATMENTS; IONS; SEMIMETALS
Optional Information
- Notes
- Imprint:Session d'etudes sur la canalisation des particules. Description et applications. Saclay, 27-31 mai 1974.