Published March 2006 | Version v1
Journal article Metadata-only

Electrophysical and cathodoluminescent properties of low-dimensional CdSSe/CdS structure

Creators

  • 1. P.N. Lebedev Physical Institute of RAS, Leninsky pr. 53, 119991 Moscow (Russian Federation)
  • 2. Institute of Radioengineering and Electronics of RAS, Vvedenskogo 1, 141190 Fryazino (Russian Federation)
  • 3. Ryazan State Radioengineering Academy, Gagarina 59/1, 390005 Ryazan (Russian Federation)

Description

The CdSSe/CdS structure grown by metalorganic vapour phase epitaxy (MOVPE) and prepared for vertical cavity surface emitting laser (VCSEL) was investigated by the capacitance-voltage characteristics (CV), thermostimulated capacity (TSC), current deep level transient spectroscopy (CDLTS) and cathodoluminescence (CL) methods. Deep levels (DLs) with an activation energies 0.279-1.145 eV were detected by CDLTS and TSC. Hole emission from the ground quantized level in the CdSSe quantum well (QW) was studied. The activation energy of hole emission was used for an estimation of the valence band offset in the type-II CdSSe/CdS heterostructure. Luminescence and laser properties are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200564627

Additional details

Identifiers

DOI
10.1002/pssc.200564627;

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
3
Journal Issue
4
Journal Page Range
p. 1156-1159
ISSN
1610-1634

Conference

Title
12. international conference on II-VI compounds
Dates
12-16 Sep 2005
Place
Warsaw (Poland)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
37043970
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ACTIVATION ENERGY; BAND THEORY; CADMIUM SELENIDES; CADMIUM SULFIDES; CAPACITANCE; CAPTURE; CATHODOLUMINESCENCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIELECTRIC PROPERTIES; ELECTRON COLLISIONS; ELECTRON DENSITY; ELECTRONIC STRUCTURE; EMISSION SPECTRA; GROUND STATES; HETEROJUNCTIONS; HOLES; INTEGRAL CROSS SECTIONS; ORGANOMETALLIC COMPOUNDS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0013-0065 K; VAPOR PHASE EPITAXY; VISIBLE SPECTRA
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; COLLISIONS; CROSS SECTIONS; CRYSTAL GROWTH METHODS; ELECTRICAL PROPERTIES; EMISSION; ENERGY; ENERGY LEVELS; EPITAXY; INORGANIC PHOSPHORS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; ORGANIC COMPOUNDS; PHOSPHORS; PHOTON EMISSION; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SPECTRA; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; TEMPERATURE RANGE

Optional Information

Notes
With 4 figs., 2 tabs., 9 refs.. SICI: 1610-1634(200603)3:4<1156::AID-PSSC200564627>3.0.TX;2-Z