Ion implantation depth distributions: energy deposition into atomic processes and ion locations

A useful method of calculating the energy/unit depth deposited in atomic processes by energetic ions in solids is presented. The calculated energy density is shown to correlate well with previous Monte Carlo calculations of the vacancy concentration resulting from ion bombardment and recent experimental measurements of the depth distribution of ion damage. The method also provides the depth distribution of ions in the solid as a function of their energy during the stopping process. This information would allow, for example, calculation of the location and rate of various energy-dependent interactions between incident ions and host atoms.