Published May 15, 2014 | Version v1
Journal article

A current modulation in the Gd2O3/Si/Gd2O3 quantum well structure as a mean to monitor oxygen vacancies

  • 1. Department of Physics and Optical Science, UNC-Charlotte, Charlotte, NC 28223 (United States)
  • 2. Electrical and Computer Engineering Department, UNC-Charlotte, Charlotte, NC 28223 (United States)

Description

The Gd2O3 layer grown by electron beam evaporation system normally leads to oxygen deficient sites unless the oxygen partial pressure is provided. These oxygen vacancies were monitored through their current modulating effect. This modulation controlled the current within a Si well of the Gd2O3/Si/Gd2O3 quantum well structure through the migration of the oxygen vacancies. Such behavior were not found in the structure that contains far less oxygen vacancy such as SiO2/Si/SiO2 structure

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1598
Journal Issue
1
Journal Page Range
p. 146-149
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
7. international conference on low dimensional structures and devices
Acronym
LDSD 2011
Dates
22-27 May 2011
Place
Telchac (Mexico)

Optional Information

Notes
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