Published September 18, 2006 | Version v1
Journal article Metadata-only

Structure of HfO2 films epitaxially grown on GaAs (001)

Creators

  • 1. Research Division, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)
  • 2. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  • 3. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

Description

High-quality HfO2 films of technologically important thickness ranging from 1.8 to 17 nm have been grown epitaxially on GaAs (001) by molecular beam epitaxy. Thorough structural and morphological investigations were carried out by x-ray scattering and high-resolution transmission electron microscopy. The films exhibit an atomically sharp interface with the substrate and are of a monoclinic phase with predominant (001)-plane epitaxy between the HfO2 films and GaAs, in spite of a large lattice mismatch of >8.5%

Additional details

Identifiers

DOI
10.1063/1.2356895;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
89
Journal Issue
12
Journal Page Range
p. 122907-122907.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38024086
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL GROWTH; DIELECTRIC MATERIALS; GALLIUM ARSENIDES; HAFNIUM OXIDES; INTERFACES; MOLECULAR BEAM EPITAXY; MONOCLINIC LATTICES; SUBSTRATES; THICKNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIFFRACTION; DIMENSIONS; ELECTRON MICROSCOPY; EPITAXY; FILMS; GALLIUM COMPOUNDS; HAFNIUM COMPOUNDS; MATERIALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SCATTERING; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
(c) 2006 American Institute of Physics