Published July 2016 | Version v1
Journal article

Precursor dependent nucleation and growth of ruthenium films during chemical vapor deposition

  • 1. McKetta Department of Chemical Engineering, University of Texas at Austin, 200 E Dean Keeton St. Stop C0400, Austin, Texas 78712 (United States)

Description

Nucleation and film growth characteristics are reported during chemical vapor deposition of Ru on SiO2 using triruthenium dodecacarbonyl [Ru3(CO)12] and ruthenium bis(di-t-butylacetamidinate) dicarbonyl [Ru(tBu-Me-amd)2(CO)2]. Films grown from Ru3(CO)12 follow the three dimensional (3D) Volmer–Weber growth mode. In contrast, films grown from Ru(tBu-Me-amd)2(CO)2 follow the pseudo-layer-by-layer growth mode with two dimensional wetting layer islands forming before 3D particle growth is observed on the islands. A relationship between free isolated hydroxyl [(Si-OH)i] group density and Ru nucleation density is found for Ru3(CO)12 and is associated with (Si-OH)i acting as the reaction sites for activation of Ru3(CO)12 and in turn generating an adjustable adatom concentration. Carbon monoxide and ammonia addition to the gas phase during film growth from Ru(tBu-Me-amd)2(CO)2 lead to smoother films by inducing surface reconstructions during the 3D phase of pseudo-layer-by-layer growth; these gases also lead to films with lower resistivity and lower crystalline character.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Journal Volume
34
Journal Issue
4
Journal Page Range
p. 041514-041514.7
ISSN
0734-2101
CODEN
JVTAD6

Optional Information

Notes
(c) 2016 American Vacuum Society