Behaviour of supersaturated solid solutions generated by ion implantation in silicon

An approach to structural-phase transitions in silicon based on the theory of supersaturated solid solutions is developed. Both intrinsic internodal atoms of silicon and vacancies and the atoms of implanted impurities may serve as the dissolved component. The approach is applicable to the analysis of amorphism, ion-stimulated crystallization, ion synthesis of silicon nitride and oxide layers. The approach makes it possible to obtain a satisfactory agreement with the experimental data