Channeling effect studies in V3Si single crystals

Angular scans through the [100] and [110] channeling directions in V3Si have been performed using elastically scattered He ions for the V-rows and the 28Si(d,p8)29Si reaction for the Si-rows. The amplitude of thermal vibration perpendicular to the V-chains was found to be larger than that at 450 to them. The Si atoms however vibrate isotropically. The use of multi-row potentials instead of single-row potentials leads to better overall agreement between measured and calculated critical angles. (Auth.)