Published December 15, 1988
| Version v1
Journal article
Amorphous silicon position-sensitive detector
- 1. Tokyo Univ. (Japan). Faculty of Engineering
Description
A new charge-integrating-type position-sensitive detector which consists of an amorphous silicon linear image sensor with a Gd2O2S phosphor sheet and a signal processing system has been developed. The sensor is 256 mm long and 100 μm wide with 2048 elements on 125 μm centres. The system has a spatial resolution of 500 μm and a wide dynamic range of more than 66 dB. The minimum rms noise corresponds to 140 photons/s for 8 keV X-rays. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research, Section A
- Journal Volume
- 273
- Journal Issue
- 2/3
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. A.
- Journal Page Range
- 640-644
- ISSN
- 0168-9002
- CODEN
- NIMAE
Conference
- Title
- London conference on position sensitive detectors.
- Dates
- 7-11 Sep 1987.
- Place
- London (UK).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 20023561
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; BACKGROUND NOISE; DATA ACQUISITION SYSTEMS; KEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; POSITION SENSITIVE DETECTORS; SI SEMICONDUCTOR DETECTORS; SILICON; SPATIAL RESOLUTION; X-RAY DETECTION
- Descriptors DEC
- DETECTION; ELEMENTS; ENERGY RANGE; KEV RANGE; MEASURING INSTRUMENTS; NOISE; RADIATION DETECTION; RADIATION DETECTORS; RADIATION EFFECTS; RESOLUTION; SEMICONDUCTOR DETECTORS; SEMIMETALS