Published July 20, 2015 | Version v1
Journal article

Self-limited kinetics of electron doping in correlated oxides

  • 1. School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)
  • 2. Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
  • 3. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Source, North China Electric Power University, Beijing 102206 (China)
  • 4. CAS Key Laboratory of Materials for Energy Conversion, Shanghai institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)
  • 5. Laboratory of Ion Beam Physics, ETH Zurich, Zurich 8093 (Switzerland)

Description

Electron doping by hydrogenation can reversibly modify the electrical properties of complex oxides. We show that in order to realize large, fast, and reversible response to hydrogen, it is important to consider both the electron configuration on the transition metal 3d orbitals, as well as the thermodynamic stability in nickelates. Specifically, large doping-induced resistivity modulations ranging several orders of magnitude change are only observed for rare earth nickelates with small ionic radii on the A-site, in which case both electron correlation effects and the meta-stability of Ni3+ are important considerations. Charge doping via metastable incorporation of ionic dopants is of relevance to correlated oxide-based devices where advancing approaches to modify the ground state electronic properties is an important problem

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
107
Journal Issue
3
Journal Page Range
p. 031905-031905.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2015 AIP Publishing LLC