Published November 2009
| Version v1
Journal article
Plasma waves Terahertz detection by field effect transistor in Quantinzing magnetic fields
Creators
- 1. Universite Montpellier II, CNRS, Place E. Bataillon, 34095 Montpellier (France)
- 2. Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw (Poland)
Description
Detection of THz radiation by a Field Effect Transistor InGaAs/InAlAs transistor was investigated at 4.2 K as a function of the magnetic field and gate voltage. We observed oscillations of the photovoltaic signal analogous to Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance conditions. The results are successfully quantitatively described within the frame of a recent theory, taking into account a new source of nonlinearity related to Shubnikov-de Haas effect. We show that the detection is due to gated plasmon.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/193/1/012083Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 193
- Journal Issue
- 1
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- 16. international conference on electron dynamics in semiconductors, optoelectronics and nanostructures
- Acronym
- EDISON 16
- Dates
- 24-28 Aug 2009
- Place
- Montpellier (France)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42029936
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ARSENIDES; CYCLOTRON RESONANCE; DETECTION; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; INDIUM ARSENIDES; MAGNETIC FIELDS; NONLINEAR PROBLEMS; OSCILLATIONS; PHOTOVOLTAIC EFFECT; PLASMA WAVES; PLASMONS; SHUBNIKOV-DE HAAS EFFECT; TEMPERATURE RANGE 0000-0013 K
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PHOTOELECTRIC EFFECT; PNICTIDES; QUASI PARTICLES; RESONANCE; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE; TRANSISTORS