Published December 8, 2008 | Version v1
Journal article

Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy

  • 1. Fisk University, Nashville, TN (United States)
  • 2. National Institute of Standards and Technology, Gaithersburg, MD (United States)
  • 3. Savannah River National Laboratory, Aiken, SC (United States)

Description

CdZnTe (CZT) crystals can be grown under controlled conditions to produce high-quality crystals to be used as room-temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal's performance. In this study, CZT crystals were analyzed by micro-Raman spectroscopy. The growth of Te rich areas on the surface was induced by low-power lasers. The growth was observed versus time with low-power Raman scattering and was observed immediately under higher-power conditions. The detector response was also measured after induced Te enrichment.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Electronic Materials
Journal Volume
37
Journal Issue
9
Journal Page Range
p. 1438-1443
ISSN
0361-5235
CODEN
JECMA5

Optional Information

Notes
doi 10.1007/s11664-008-0448-x
Funding organization
US Department of Energy (United States)