Non-reflective black cathode in organic light-emitting diode
Creators
Description
A black conductive electrode with a resistivity of 6.75x10-4 Ω cm was fabricated by doping silicon monoxide into aluminum by simple thermal evaporation. The relative optical reflectance of such electrode layers within the visible spectral range was between 0.12 and 0.05. The black electrode was incorporated in an organic light-emitting diode (OLED) by sequential deposition of α-napthylphenylbiphenyl diamine, tris-(8-hydroxyquinoline) aluminum and the black layer on indium-tin-oxide-coated glass substrates. The black layer reduced the reflection of ambient light entering the device and resulted in a significant increase of the OLED display contrast ratio. The electroluminescence properties of the device incorporating the black layer were investigated
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2003.10.003;
- PII
- S0040609003013579;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 446
- Journal Issue
- 1
- Journal Page Range
- p. 143-146
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37013732
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; CATHODES; DEPOSITION; ELECTROLUMINESCENCE; EVAPORATION; INDIUM OXIDES; LAYERS; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; SILICON OXIDES; TIN OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRODES; ELEMENTS; EMISSION; INDIUM COMPOUNDS; LUMINESCENCE; METALS; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHOTON EMISSION; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SILICON COMPOUNDS; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.