Fabrication of Cu₂ZnSn(S,Se)₄ (CZTSSe) absorber films based on solid-phase synthesis and blade coating processes

Graphical abstract: - Highlights: • Pure CZTS nano-crystalline have been prepared based on solid-phase synthesis. • A simple and modified doctor blade process followed by a selenization technique was utilized to fabricate CZTSSe absorber films. • Comparative studies on the properties of CZTS and CZTSSe absorber films have been investigated. • The band gap of CZTSSe absorber films was determined to be 1.26 eV. - Abstract: CZTSSe is an important earth abundant collection of materials for the development of low cost and high efficiency thin film solar cells. This work developed a simple non-vacuum-based route to fabricate CZTSSe absorber films. This was demonstrated by first synthesizing Cu₂ZnSnS₄ (CZTS) nano-crystalline based on solid-phase synthesis. Then a stable colloidal ink composed of CZTS nano-crystalline was blade coated on Mo-coated substrates followed by an annealing process under Ar atmosphere. After CZTS films formation, the films were sintered into CZTSSe absorber films by exposing them under Selenium vapor. The formation of a kesterite type CZTS was confirmed using X-ray diffraction and Raman scattering measurements. The band gap of CZTSSe absorber films was determined to be 1.26 eV, which was appropriate for use as an absorber layer in thin film solar cells. The CZTSSe absorber films showed a good photovoltatic performance, demonstrating this simple approach had great potential for CZTSSe solar cell production.