Published September 1998 | Version v1
Journal article Metadata-only

Effect of the quantum-dot surface density in the active region on injection-laser characteristics

Creators

  • 1. Institut fuer Festkoerperphysik, Technische Universitaet Berlin, D-10623 Berlin (Germany)
  • 2. A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

Description

A new method of increasing the surface density of self-organized semiconductor quantum dots formed by molecular-beam epitaxy is proposed. A comparative analysis of the characteristics of injection lasers based on quantum-dot arrays with different surface density is made. It is shown that the use of quantum-dot arrays of higher density makes it possible to decrease substantially the threshold current density in the region of large losses and to increase the maximum gain and the maximum output radiation power

Additional details

Identifiers

DOI
10.1134/1.1187532;
PII
S1063-7826(98)02009-2;

Publishing Information

Journal Title
Semiconductors
Journal Volume
32
Journal Issue
9
Journal Page Range
p. 997-1000
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35051806
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
CURRENT DENSITY; EXPERIMENTAL DATA; MOLECULAR BEAM EPITAXY; PHYSICAL RADIATION EFFECTS; THEORETICAL DATA
Descriptors DEC
CRYSTAL GROWTH METHODS; DATA; EPITAXY; INFORMATION; NUMERICAL DATA; RADIATION EFFECTS

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 32, 1114-1118 (September 1998); (c) 1998 American Institute of Physics.