Local piezoelectric properties of ZnO thin films prepared by RF-plasma-assisted pulsed-laser deposition method
- 1. Centre for Mechanical Technology and Automation, Universidade de Aveiro, 3810-193 Aveiro (Portugal)
- 2. Departamento de Fisica, Instituto Superior Tecnico, 1049-001 Lisboa (Portugal)
- 3. Departamento de Engenharia Ceramica e do Vidro and CICECO, Universidade de Aveiro, 3810-193 Aveiro (Portugal)
Description
Zinc oxide (ZnO) thin films were grown on uncoated and zinc-coated Corning glass substrates by pulsed-laser deposition (PLD). X-ray diffraction measurements revealed that the as-deposited films are polycrystalline having preferential orientation along the [0002] and [10 1-bar 1] directions. Transmittance spectroscopy verified that the as-deposited films are transparent with a direct bandgap of about 3.28 eV at room temperature. Piezoresponse imaging and local hysteresis loop acquisition were performed to characterize the piezoelectric and possible ferroelectric properties of the films. The out-of-plane (effective longitudinal, d||) and in-plane (effective shear, dperpendicular) coefficients were estimated from the local piezoresponse based on the comparison with LiNbO3 single crystals. Measurements of all three components of piezoresponse (one longitudinal and two shear signals) allowed constructing piezoelectric maps for polycrystalline ZnO and to relate the variation of piezoelectric properties to the crystallographic and grain structure of the films. A shifted piezoresponse hysteresis loop under high voltages hints at the possible pseudoferroelectricity, as discussed recently by Tagantsev (2008 Appl. Phys. Lett. 93 202905).
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/21/23/235703Additional details
Identifiers
- DOI
- 10.1088/0957-4484/21/23/235703;
- PII
- S0957-4484(10)46100-0;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 21
- Journal Issue
- 23
- Journal Page Range
- [6 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43024473
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CRYSTALLOGRAPHY; ENERGY BEAM DEPOSITION; FERROELECTRIC MATERIALS; HYSTERESIS; IMAGES; LASER RADIATION; LITHIUM COMPOUNDS; MONOCRYSTALS; NANOSTRUCTURES; NIOBATES; PIEZOELECTRICITY; POLYCRYSTALS; PULSED IRRADIATION; SIGNALS; SPECTROSCOPY; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; ZINC; ZINC OXIDES
- Descriptors DEC
- ALKALI METAL COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTALS; DEPOSITION; DIELECTRIC MATERIALS; DIFFRACTION; ELECTRICITY; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; IRRADIATION; MATERIALS; METALS; NIOBIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; REFRACTORY METAL COMPOUNDS; SCATTERING; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS