Published 1980 | Version v1
Report Open

Ion-implantation-induced phase separation and crystallization in lithia-silica glasses

Description

Crystallization of annealed Li2O.2SiO2 glasses implanted with inert ions and fused SiO2 glass implanted with Li ions was monitored using infrared reflection spectroscopy. Elastic recoil detection analysis was used to study changes in the Li and H concentration induced in these glasses by implantation and annealing. Implantation of Li2O.2SiO2 with inert ions results in Li depletion, accompanied by H indiffusion, in the implanted region. For Li-implanted SiO2, crystallization of α-quartz is accompanied by appreciable Li diffusion to the surface and attendant H migration to the Li-depleted region. The crystallization mechanisms are discussed in terms of phase separation in the lithia-silica system

Availability note (English)

MF available from INIS under the Report Number; Available from NTIS., PC A03/MF A01.

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Additional details

Publishing Information

Imprint Pagination
26 p.
Report number
SAND--80-0823C

Conference

Title
Ion beam modification of materials conference.
Dates
14 - 18 Jul 1980.
Place
Albany, NY, USA.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
11564884
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; DIFFUSION; GLASS; HYDROGEN; ION IMPLANTATION; LITHIUM; LITHIUM OXIDES; SILICON OXIDES
Descriptors DEC
ALKALI METAL COMPOUNDS; ALKALI METALS; CHALCOGENIDES; ELEMENTS; HEAT TREATMENTS; LITHIUM COMPOUNDS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS

Optional Information

Secondary number(s)
CONF-800744--5.