Published 1988
| Version v1
Miscellaneous
Characterization of ion beam mixing induced defects in Si
Creators
- 1. Port Elizabeth Univ. (South Africa). Dept. of Physics
Description
Abstract only
Additional details
Publishing Information
- Imprint Title
- 33rd Annual conference and the 23rd annual theoretical seminar of the South African Institute of Physics
- Imprint Pagination
- 78 p.
- Journal Page Range
- p. 68.
- Report number
- INIS-mf--11319
Conference
- Title
- 33. Annual conference of the South African Institute of Physics.
- Dates
- 4-8 Jul 1988.
- Place
- Grahamstown (South Africa).
INIS
- Country of Publication
- South Africa
- Country of Input or Organization
- South Africa
- INIS RN
- 19094210
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CRYSTAL DEFECTS; CRYSTAL LATTICES; ION BEAMS; ION IMPLANTATION; KEV RANGE 10-100; SCHOTTKY BARRIER DIODES; SILICON; SPECTROSCOPY
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; KEV RANGE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS