Published June 2006
| Version v1
Journal article
Structural and optical characterization of AlyInxGa1-x-yN quantum dots
- 1. 4. Physical Institute, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart (Germany)
Description
AlyInxGa1-x-yN quantum dots have been grown by MOVPE on (0001) sapphire substrates. We investigated the dependence of the self-assembled quantum dot density and height on the growth conditions: the growth temperature, the amount of deposited material, and the growth rate interruption. A maximum dot density of 4 x 1010 cm-2 was achieved. The optical properties were studied after overgrowing of the QDs with a GaN cap layer. We observed very intense luminescence in the region between 2.4 and 2.8 eV and decay times of 1.8 ns under resonant excitation. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssc.200565245Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. C, Conferences
- Journal Volume
- 3
- Journal Issue
- 6
- Journal Page Range
- p. 2073-2077
- ISSN
- 1610-1634
Conference
- Title
- 6. international conference on nitride semiconductors
- Acronym
- ICNS-6
- Dates
- 28 Aug - 2 Sep 2005
- Place
- Bremen (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 37071247
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM NITRIDES; ATOMIC FORCE MICROSCOPY; DE-EXCITATION; EMISSION SPECTRA; ENERGY SPECTRA; EXCITED STATES; GALLIUM NITRIDES; INDIUM NITRIDES; LAYERS; LIFETIME; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM DOTS; SAPPHIRE; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 1000-4000 K; VAPOR PHASE EPITAXY; VISIBLE SPECTRA
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CORUNDUM; CRYSTAL GROWTH METHODS; EMISSION; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MICROSCOPY; MINERALS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; OXIDE MINERALS; PHOTON EMISSION; PNICTIDES; SPECTRA; TEMPERATURE RANGE
Optional Information
- Notes
- With 4 figs., 1 tab., 11 refs.. SICI: 1610-1634(200606)3:6<2073::AID-PSSC200565245>3.0.TX;2-H