Published 1996
| Version v1
Book
Interfacial amorphisation in Al-Ge system studied by variable low energy positron beam
- 1. Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)
Description
The interfacial amorphization in Al-Ge thin film system using variable low energy positron beam (LEPB) has been studied. A Ge film of about 100 nm and an Al film of 200 nm thickness were sequentially deposited on a 500 μ thick Si(100) substrate by thermal evaporation
Additional details
Publishing Information
- Publisher
- Department of Atomic Energy.
- Imprint Place
- Mumbai (India)
- Imprint Title
- Proceedings of the DAE solid state physics symposium. V. 39C
- Imprint Pagination
- 497 p.
- Journal Page Range
- p. 366.
Conference
- Title
- 39. DAE solid state physics symposium.
- Dates
- 27-31 Dec 1996.
- Place
- Mumbai (India).
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 29014986
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ALLOYS; AMORPHOUS STATE; CRYSTAL DEFECTS; CRYSTAL-PHASE TRANSFORMATIONS; DOPPLER BROADENING; GERMANIUM ALLOYS; INTERFACES; ION IMPLANTATION; POSITRON BEAMS; THIN FILMS
- Descriptors DEC
- ALLOYS; BEAMS; CRYSTAL STRUCTURE; FILMS; LEPTON BEAMS; LINE BROADENING; PARTICLE BEAMS; PHASE TRANSFORMATIONS
Optional Information
- Notes
- 3 refs., 1 fig.