Published October 7, 2002
| Version v1
Journal article
Thickness determination of very thin SiO2 films on Si by electron-induced x-ray emission spectroscopy
- 1. Institute of Physics, St. Petersburg State University, Ulyanovskaya 1, St. Petersburg, Petrodvorets 198904 (Russian Federation)
- 2. Laboratoire de Chimie Physique-Matiere et Rayonnement, Universite Pierre et Marie Curie, UMR Centre National de la Recherche Scientifique 7614, 11 rue Pierre et Marie Curie, F-75231 Paris Cedex 05 (France)
Description
Electron-induced x-ray emission spectroscopy (EXES) associate with a semi-empirical electron scattering model is used to determine thicknesses between 2 and 21 nm of SiO2 films on Si. The small charging effect occurring upon electron irradiation is taken into account by introducing a retarding potential in the model. The results are in very close agreement with those obtained by spectroscopic ellipsometry and x-ray reflectometry. It is demonstrated that the EXES with its model is a well-suited method for the quantitative analysis of thin insulating films with an uncertainty lower than 5%
Additional details
Identifiers
- DOI
- 10.1063/1.1511281;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 81
- Journal Issue
- 15
- Journal Page Range
- p. 2740-2742
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35017748
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ELECTRON BEAMS; EMISSION SPECTRA; SEMICONDUCTOR MATERIALS; SILICON OXIDES; THICKNESS; THIN FILMS; X-RAY SPECTRA
- Descriptors DEC
- BEAMS; CHALCOGENIDES; DIMENSIONS; FILMS; LEPTON BEAMS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; SILICON COMPOUNDS; SPECTRA
Optional Information
- Notes
- (c) 2002 American Institute of Physics.