Published December 1996 | Version v1
Journal article Metadata-only

InGaAs/InP mesa-type photodiode

Creators

  • 1. Instytut Technologii Elektronowej, Warsaw (Poland)

Description

Work carried out at IET on In0,53Ga0,47As/InP mesa-type photodiode for optical fiber systems in the wavelength region of 1.1-1.65 μm is summarize. Design considerations, processing and characterization of developed photodiodes are presented. (author). 6 refs, 4 figs

Additional details

Additional titles

Original title (Polish)
Fotodioda PIN z InGaAs/InP o konstrukcji mesa

Publishing Information

Journal Title
Elektronika
Journal Volume
37
Journal Issue
12
Journal Page Range
p. 35-38.
ISSN
0033-2089
CODEN
EKNTBZ

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
28045793
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTRIC MEASURING INSTRUMENTS; FABRICATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; OPTICAL FIBERS; PHOTODIODES; SEMICONDUCTOR MATERIALS; TOWNSEND DISCHARGE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ELECTRIC DISCHARGES; ELECTRICAL EQUIPMENT; EQUIPMENT; FIBERS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MEASURING INSTRUMENTS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES