Published May 1996 | Version v1
Journal article Metadata-only

Optical properties and photoluminescence of epitaxial layers Pb1-xSnxTe doped by cadmium

Creators

Description

Epitaxial layers are grown in a quasiclassical vacuum on barium fluoride (111) chips by the hot wall method. Cadmium impurity effect on the optical width of the forbidden zone and high-frequency dielectric permittivity as well as on the value of photoluminescence intensity is determined

Additional details

Additional titles

Original title (Russian)
Оптические явойства и фотолыхминесценция легированных кадмиемп эпитаксиальных слоев Пб

Publishing Information

Journal Title
Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika
Journal Volume
39
Journal Issue
5
Journal Page Range
p. 8-11.
ISSN
0021-3411
CODEN
IVUFAC

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
28044599
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CONCENTRATION RATIO; ENERGY LEVELS; LAYERS; LEAD TELLURIDES; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; TIN TELLURIDES
Descriptors DEC
CHALCOGENIDES; EMISSION; LEAD COMPOUNDS; LUMINESCENCE; PHOTON EMISSION; TELLURIDES; TELLURIUM COMPOUNDS; TIN COMPOUNDS