Published July 15, 2003
| Version v1
Journal article
Nanoscale silicon prepared on different substrates using electron-beam evaporation and their field-emission property
Description
Silicon nanorods (about 10-35 nm height) on silicon and porous silicon substrates were synthesized using ultra-high vacuum electron-beam evaporation in the present of a Fe catalyst. Atomic force microscopy (AFM) is used to estimate the dimension and check the morphology of the silicon nanoclusters. The electron field emission is used to reveals the property of silicon nanorods grown on different substrates
Additional details
Identifiers
- DOI
- 10.1016/S0169-4332(03)00561-0;
- arXiv
- arXiv:hep-ph/9607368v1;
- PII
- S0169433203005610;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 217
- Journal Issue
- 1-4
- Journal Page Range
- p. 39-42
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38086806
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CATALYSTS; ELECTRON BEAMS; EVAPORATION; FIELD EMISSION; IRON; MORPHOLOGY; NANOSTRUCTURES; POROUS MATERIALS; SILICON
- Descriptors DEC
- BEAMS; ELEMENTS; EMISSION; LEPTON BEAMS; MATERIALS; METALS; MICROSCOPY; PARTICLE BEAMS; PHASE TRANSFORMATIONS; SEMIMETALS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.