Published March 1987
| Version v1
Journal article
Ion beam mixing to produce disordered AlSi superconducting alloys
Creators
- 1. Beijing Univ., BJ (China). Dept. of Physics
- 2. Academia Sinica, Beijing, BJ (China). Inst. of Physics
Description
Multilayered Al/Si films were bombarded with Ar ions at LHe temperature and superconducting transition temperature Tsub(c) was measured in situ. The highest Tsub(c) thus obtained was 7.53 K. The systematic studies on samples with different compositions suggest that ion induced disorder might be the main reason for Tsub(c) enhancement in these AlSi alloys. (author)
Additional details
Publishing Information
- Journal Title
- Solid State Commun.
- Journal Volume
- 61
- Journal Issue
- 12
- Series
- Solid State Commun.
- Journal Page Range
- 791-793
- ISSN
- 0038-1098
- CODEN
- SSCOA
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 18058734
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ALLOYS; ARGON IONS; ION BEAMS; LAYERS; ORDER-DISORDER TRANSFORMATIONS; QUANTITY RATIO; SILICON ALLOYS; SUPERCONDUCTIVITY; SUPERCONDUCTORS; TRANSITION TEMPERATURE; ULTRALOW TEMPERATURE
- Descriptors DEC
- ALLOYS; BEAMS; CHARGED PARTICLES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; IONS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; THERMODYNAMIC PROPERTIES