QMSA analysis and effects of extreme space-charge scattering on the mobility in III-V systems grown by MBE

In this work, temperature dependent electron and magneto transport properties of InGaAs/GaAs Sl structure and AlGaAs/GaAs structure semiconductors grown by MBE were investigated. Local and general metallic behaviors and very-low mobilities were observed. Low mobility can be explained mainly by extreme space-charge scattering in these samples. One of the variable of this scattering mechanism; A, which explained with dependence A∼(T/N)1/3 in literature, showed off to investigated as NsA and dependence showed off as NsA∼(T/N)-1/3 in extreme space-charge condition. Furthermore, with using QMSA; electron-hole couples were observed. These are the metallic precipitates that forms the space-charge and causes enchanged recombination and generation centers. Using these results, QMSA analysis were suggested to may trusted in trends and variety than numerical results