High yield Cu-Co CPP GMR multilayer sensors
Description
We have fabricated and tested GMR magnetic flux sensors that operate in the CPP mode. This work is a continuation of the ultra-high density magnetic sensor research introduced at INTERMAG 96. We have made two significant modifications to the process sequence. First, contact to the sensor is made through a metal conduit deposited in situ with the multilayers. This deposition replaces electroplating. This configuration ensures a good electrical interface between the top of multilayer stack and the top contact, and a continuous, conductive current path to the sensor. The consequences of this modification are an increase in yield of operational devices to ≥90% per wafer and a significant reduction of the device resistance to ≤560 milliohms and of the uniformity of the device resistance to ≤3%. Second, the as-deposited multilayer structure has been changed from [Cu 30 angstrom/Co 20 angstrom]18 (third peak) to [Cu 20.5 angstrom/Co 12 angstrom]30 (second peak) to increase the CPP and CIP responses. The sheet film second peak CIP GMR response is 18% and the sensitivity is 0.08 %/Oe. The sheet film third peak CIP GMR response is 8% and the sensitivity is 0. 05 %/Oe. The second peak CPP GMR response averaged over twenty devices on a four inch silicon substrate is 28% ± 6%. The response decreases radially from the substrate center. The average response at the center of the substrate is 33% ± 4%. The average second peak CPP sensitivity is 0.09 %/Oe ± 0.02 %/Oe. The best second peak CPP response from a single device is 39%. The sensitivity of that device is 0.13 %/Oe. The third peak CPP GMR response is approximately 14 %. The third peak CPP response sensitivity is 0.07 %/Oe. 6 refs., 3 figs
Availability note (English)
MF available from INIS under the Report Number; Also available from OSTI as DE97052044; NTIS; US Govt. Printing Office Dep.
Files
Additional details
Publishing Information
- Imprint Pagination
- 9 p.
- Report number
- UCRL-JC--126325
Conference
- Title
- IEEE international magnetic conference.
- Dates
- Apr 1997.
- Place
- New Orleans, LA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28076544
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- EXPERIMENTAL DATA; FABRICATION; MAGNETIC FLUX; MAGNETOMETERS; PERFORMANCE; PERFORMANCE TESTING
- Descriptors DEC
- DATA; INFORMATION; MEASURING INSTRUMENTS; NUMERICAL DATA; TESTING
Optional Information
- Contract/Grant/Project number
- Contract W-7405-ENG-48
- Funding organization
- USDOE Assistant Secretary for Defense Programs, Washington, DC (United States).
- Secondary number(s)
- CONF-970468--2.