Published February 22, 2010 | Version v1
Journal article Metadata-only

Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

Creators

  • 1. Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden)
  • 2. Instituto Tecnologico e Nuclear, 2686-953 Sacavem (Portugal)
  • 3. Department of Electrical Engineering, University of Nebraska, Lincoln, Nebraska 68588 (United States)
  • 4. Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan (China)
  • 5. Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853 (United States)
  • 6. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)
  • 7. Department of Photonics, Ritsumeikan University, Shiga 525-8577 (Japan)

Description

We study the unintentional H impurities in relation to the free electron properties of state-of-the-art InN films grown by molecular beam epitaxy (MBE). Enhanced concentrations of H are revealed in the near surface regions of the films, indicating postgrowth surface contamination by H. The near surface hydrogen could not be removed upon thermal annealing and may have significant implications for the surface and bulk free electron properties of InN. The bulk free electron concentrations were found to scale with the bulk H concentrations while no distinct correlation with dislocation density could be inferred, indicating a major role of hydrogen for the unintentional conductivity in MBE InN.

Additional details

Identifiers

DOI
10.1063/1.3327333;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
96
Journal Issue
8
Journal Page Range
p. 081907-081907.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41078495
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; CRYSTAL GROWTH; DISLOCATIONS; ELECTRONS; HYDROGEN; IMPURITIES; INDIUM NITRIDES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SURFACE CONTAMINATION; THIN FILMS
Descriptors DEC
CONTAMINATION; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; EPITAXY; FERMIONS; FILMS; HEAT TREATMENTS; INDIUM COMPOUNDS; LEPTONS; LINE DEFECTS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES

Optional Information

Notes
(c) 2010 American Institute of Physics