Published June 2004 | Version v1
Journal article

Stopping power of thin GaAs films for Si and P ions

Description

Stopping powers of energetic Si and P ions are measured in thin GaAs films. A new technique derived from molecular beam epitaxy (MBE) was developed to prepare near stoichiometric GaAs films on thin carbon layers for use in transmission ion beam experiments. The GaAs films were characterized using X-ray photoelectron spectroscopy (XPS) and particle induced X-ray emission (PIXE). Stopping power data are presented for the first time for Si and P in GaAs

Additional details

Identifiers

DOI
10.1016/j.nimb.2004.01.067;
PII
S0168583X04000953;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
219-220
Journal Issue
4
Journal Page Range
p. 273-277
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
16. international conference on ion beam analysis
Dates
29 Jun - 4 Jul 2003
Place
Albuquerque, NM (United States)

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.