Published June 1, 2001
| Version v1
Journal article
Silicon pixel capacitance
Description
Capacitance measurements have been made on silicon pixel sensors of types n+-on-n, p+-on-n, and n+-on-p. The arrays test a variety of implant and gap widths, and the n+-on-n devices test several p-stop designs. The measurements examine inter-pixel and backplane contributions and include studies of temperature dependence. Measurements were made before and after irradiation with fluences relevant to LHC experiments and Fermilab Tevatron Run 2
Additional details
Identifiers
- PII
- S0168900201003485;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 465
- Journal Issue
- 1
- Journal Page Range
- p. 70-76
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Germany
- INIS RN
- 33059420
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CAPACITANCE; CERN LHC; FERMILAB TEVATRON; JUNCTION DETECTORS; PHYSICAL RADIATION EFFECTS; POSITION SENSITIVE DETECTORS; SI SEMICONDUCTOR DETECTORS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ACCELERATORS; CYCLIC ACCELERATORS; ELECTRICAL PROPERTIES; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; STORAGE RINGS; SYNCHROTRONS
Optional Information
- Copyright
- Copyright (c) 2001 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.