Published June 1, 2001 | Version v1
Journal article

Silicon pixel capacitance

Description

Capacitance measurements have been made on silicon pixel sensors of types n+-on-n, p+-on-n, and n+-on-p. The arrays test a variety of implant and gap widths, and the n+-on-n devices test several p-stop designs. The measurements examine inter-pixel and backplane contributions and include studies of temperature dependence. Measurements were made before and after irradiation with fluences relevant to LHC experiments and Fermilab Tevatron Run 2

Additional details

Identifiers

PII
S0168900201003485;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
465
Journal Issue
1
Journal Page Range
p. 70-76
ISSN
0168-9002
CODEN
NIMAER

Optional Information

Copyright
Copyright (c) 2001 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.