Published June 30, 2005
| Version v1
Journal article
Integrating magnetism into semiconductor electronics
- 1. A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)
Description
The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)
Availability note (English)
Available from http://dx.doi.org/10.1070/PU2005v048n06ABEH002200Additional details
Identifiers
Publishing Information
- Journal Title
- Physics Uspekhi
- Journal Volume
- 48
- Journal Issue
- 6
- Journal Page Range
- p. 603-608
- ISSN
- 1063-7869
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41012915
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- FERROMAGNETISM; HYSTERESIS; MAGNETIC PROPERTIES; MAGNETIZATION; READOUT SYSTEMS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- MAGNETISM; MATERIALS; PHYSICAL PROPERTIES