Published June 30, 2005 | Version v1
Journal article

Integrating magnetism into semiconductor electronics

  • 1. A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

Description

The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

Availability note (English)

Available from http://dx.doi.org/10.1070/PU2005v048n06ABEH002200

Additional details

Publishing Information

Journal Title
Physics Uspekhi
Journal Volume
48
Journal Issue
6
Journal Page Range
p. 603-608
ISSN
1063-7869

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41012915
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
FERROMAGNETISM; HYSTERESIS; MAGNETIC PROPERTIES; MAGNETIZATION; READOUT SYSTEMS; SEMICONDUCTOR MATERIALS
Descriptors DEC
MAGNETISM; MATERIALS; PHYSICAL PROPERTIES