Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature
Creators
- 1. Department of Physics, University of Trieste, Via Valerio 2, I-34127 Trieste (Italy)
- 2. IOM-CNR Laboratorio TASC, S. S. 14, Km. 163.5, I-34149 Trieste (Italy)
- 3. CEA, INAC-SP2M, « Nanophysique et Semiconducteurs » Group, F-38000 Grenoble (France)
- 4. Univ. Grenoble Alpes, F-38000 Grenoble (France)
- 5. CNRS, Institut Néel, « Nanophysique et Semiconducteurs » Group, F-38000 Grenoble (France)
- 6. S3 NANO-CNR, Via Campi 213/A, I-41125 Modena (Italy)
- 7. IMEM-CNR, Parco Area delle Scienze 37/A, I-43010 Parma (Italy)
Description
ZnSe nanowires with a dominant wurtzite structure have been grown at low temperature (300 °C) by molecular beam epitaxy assisted by solid Au nanoparticles. The nanowires emission is polarized perpendicularly to their axis in agreement with the wurtzite selection rules. Alternations of wurtzite and zinc-blende regions have been observed by transmission electron microscopy, and their impact on the nanowires optical properties has been studied by microphotoluminescence. The nanowires show a dominant intense near-band-edge emission as well as the ZnSe wurtzite free exciton line. A type II band alignment between zinc-blende and wurtzite ZnSe is evidenced by time-resolved photoluminescence. From this measurement, we deduce values for the conduction and valence band offsets of 98 and 50 meV, respectively
Additional details
Identifiers
- DOI
- 10.1063/1.4929821;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 118
- Journal Issue
- 9
- Journal Page Range
- p. 095702-095702.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47065044
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- GOLD; MEV RANGE; MOLECULAR BEAM EPITAXY; NANOPARTICLES; NANOWIRES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SELECTION RULES; TEMPERATURE RANGE 0400-1000 K; TIME RESOLUTION; TRANSMISSION ELECTRON MICROSCOPY; ZINC SELENIDES; ZINC SULFIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; ENERGY RANGE; EPITAXY; INORGANIC PHOSPHORS; LUMINESCENCE; METALS; MICROSCOPY; NANOSTRUCTURES; PARTICLES; PHOSPHORS; PHOTON EMISSION; PHYSICAL PROPERTIES; RESOLUTION; SELENIDES; SELENIUM COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; TEMPERATURE RANGE; TIMING PROPERTIES; TRANSITION ELEMENTS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC