Thermal stability of Nb-Si-N and Ta-Si-N as diffusion barriers between Cu and Si
- 1. Inha Univ., Incheon (Korea, Republic of)
- 2. Anam Industrial Co., Buchon (Korea, Republic of)
Description
In this study, Nb-Si-N and Ta-Si-N films were deposited on (100)Si wafers using a reactive sputtering technique and their thermal stability indispensable for a barrier metal against Cu was investigated using sheet resistance measurement, X-ray diffraction, and Auger electron spectroscopy depth profiling. The N2/Ar gas flow ratio for the sputter deposition of the Nb-Si-N and Ta-Si-N films with the highest thermal stability were found to be 5 % and 15 %, respectively. The Nb-Si-N film failed at 700 .deg. C, while the Ta-Si-N film failed at 900 .deg. C. the failure mechanism of the Nb-Si-N was found to be as follows : Cu atoms move to the Nb-Si-N/Si interface through the Nb-Si-N film and react with Si atoms in the Si substrate resulting in the formation of Cu3Si at the Nb-Si-N/Si interface. Also the failure mechanism of Ta-Si-N was found to be nearly the same as that of Nb-Si-N
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 34
- Journal Issue
- Suppl
- Series
- 12 refs, 8 figs
- Journal Page Range
- p. 504-509
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 34074768
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- AUGER ELECTRON SPECTROSCOPY; COPPER; DIFFUSION; NITROGEN; SILICON; TANTALUM; THERMAL ANALYSIS; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELECTRON SPECTROSCOPY; ELEMENTS; METALS; NONMETALS; REFRACTORY METALS; SCATTERING; SEMIMETALS; SPECTROSCOPY; TRANSITION ELEMENTS