Published March 1989
| Version v1
Journal article
Quasi-particle and pair current steps of Josephson junctions with radiation noise in a dc magnetic field
Creators
- 1. Univ. Karlsruhe, Institut fur Elektrotechnische Grundlagen der Informatik, Hertzstr. 16, D-7500 Karlsruhe 21 (Germany, F.R.)
Description
Current voltage characteristics of a Josephson junction approximated by a long interferometer with many point junctions are simulated under the influence of a local oscillator at about half the gap frequency for different oscillator resistances. Without a dc magnetic field pair current steps with hysteresis and quasi-particle steps appear in the same I,V-characteristic. With appropriate magnetic fields Shapiro steps can be reduced. However, even at the first and second zeros of the Josephson current Shapiro steps of finite size are simulated. Modifications of current steps are described as a function of local oscillator noise. The simulated results are in qualitative agreement with measurements reported in literature
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Magnetics
- Journal Volume
- 25
- Journal Issue
- 2
- Series
- IEEE Trans. Magn.
- Journal Page Range
- 1046-1049
- ISSN
- 0018-9464
- CODEN
- IEMGA
Conference
- Title
- Applied superconductivity conference.
- Dates
- 21-25 Aug 1988.
- Place
- San Francisco, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20070921
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S99: GENERAL AND MISCELLANEOUS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COMPUTER CALCULATIONS; COMPUTERIZED SIMULATION; ELECTRIC IMPEDANCE; FINITE ELEMENT METHOD; HYSTERESIS; JOSEPHSON JUNCTIONS; MAGNETIC FIELDS; NOISE; OSCILLATORS; PERFORMANCE; QUASI PARTICLES; SUPERCONDUCTIVITY
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; EQUIPMENT; IMPEDANCE; NUMERICAL SOLUTION; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SIMULATION
Optional Information
- Secondary number(s)
- CONF-880812--.