Published August 2016 | Version v1
Journal article

High-performance electroluminescent refrigeration enabled by photon tunneling

  • 1. School of Energy and Power Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)
  • 2. G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States)

Description

Highlights: • A self-consisted near-field electroluminescent refrigeration model is proposed. • Refrigeration rate is enhanced by more than three orders of magnitude at 10 nm. • The achievable cooling temperature is lowered to about 30 K below the ambient. • The tolerance of nonintrinsic nonradiative recombination is extended to 31.6%. Electroluminescent refrigeration, though theoretically proposed half a century ago, is rarely reported due to the requirement of extremely low nonidealities. Here, we theoretically show that by operating the device in the near-field regime with a vacuum gap down to 10 nm, photon tunneling through evanescent waves can increase the tolerance of non-intrinsic nonradiative recombination to 31.6%. More importantly, the refrigeration rate may be enhanced by 2000-fold over the far-field scenario. In addition, the lowest achievable cooling temperature against the ambient condition of 300 K extends from 284.2 K to 270.6 K. A self-consisted model based on the fluctuation-dissipation theory combined with dyadic Green's function method is developed considering the effect of the chemical potential of photons on the energy of Planck's quantum oscillators. This work opens a route to greatly enhance electroluminescent refrigeration, while relieving the strict material's requirement, for solid-state noncontact thermal management.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nanoen.2016.05.049

Additional details

Identifiers

DOI
10.1016/j.nanoen.2016.05.049;
PII
S2211285516301781;

Publishing Information

Journal Title
Nano Energy (Print)
Journal Volume
26
Journal Page Range
p. 353-359
ISSN
2211-2855

INIS

Optional Information

Copyright
Copyright (c) 2016 Elsevier Ltd. All rights reserved.