Published February 28, 2005 | Version v1
Patent

Process for obtaining porous semiconductor structures

Description

The invention relates to semiconductor production technology, in particular to the obtaining of porous semiconductor structures. The process for obtaining porous semiconductor structures consists in that onto the semiconductor surface there is applied a mask, onto the uncovered regions there are implanted high-energy ions, then the mask is removed and the semiconductor surface is subjected to the electrochemical pickling. Novelty consists in that before pickling onto the semiconductor surface there is applied a layer of photoresist material.

Availability note (English)

Available at http://www.db.agepi.md/inventions/Details.aspx?id=a%202004%200250&linkPdf=/brevet/Acordare/a%202004%200250.pdf

Additional details

Additional titles

Original title (Romanian)
Procedeu de obtinere a structurilor semiconductoare poroase

Publishing Information

Imprint Pagination
4 p.
IPC:
Int. Cl. H 01 L 21/3063; 21/265; B 82 B 3/00
IPC
Int. Cl. H 01 L 21/3063; 21/265; B 82 B 3/00
Patent number
MD patent document 2714/F1/

Optional Information

Notes
2 refs., 2 figs.
Secondary number(s)
MD patent application a/2004/0250