Published April 2009
| Version v1
Journal article
Chemical etching of InSb polar planes during preparation for liquid-phase epitaxy
Creators
- 1. ANAS, Institute of Physics, Baku (Azerbaijan)
Description
The results of chemical etching in different etchants of polar A and B faces of inSb substrates, prepared for LPE, were presented. It was shown, that the etchant on basis of tartaric acid mirror polishes the B face without any traces of oxides. In result of etching in the solution on basis of lactic acid on the A face there forming the set of planes slopped to the initial surface under the angle, closely related to the misorientation angle from crystallographic plane
Additional details
Additional titles
- Original title (Russian)
- Химическое травление полярных плоскостеы (111) InSb при подготовке к йидкостноы епитаксии
Publishing Information
- Journal Title
- Fizika (Baku)
- Journal Volume
- 15
- Journal Issue
- 2
- Journal Page Range
- p. 96-99
- ISSN
- 1028-8546
INIS
- Country of Publication
- Azerbaijan
- Country of Input or Organization
- Azerbaijan
- INIS RN
- 46119802
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CHEMICAL ACTIVATION; CHEMICAL POLISHING; CRYSTALLOGRAPHY; DATA ANALYSIS; ETCHING; EXPERIMENT PLANNING; EXPERIMENTAL DATA; LACTIC ACID; LIQUID PHASE EPITAXY; OXIDES; POLAR COMPOUNDS; SAMPLE PREPARATION; SMALL ANGLE SCATTERING; SOLUTIONS
- Descriptors DEC
- CARBOXYLIC ACIDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; DATA; DATA PROCESSING; DISPERSIONS; EPITAXY; HOMOGENEOUS MIXTURES; HYDROXY ACIDS; INFORMATION; MIXTURES; NUMERICAL DATA; ORGANIC ACIDS; ORGANIC COMPOUNDS; OXYGEN COMPOUNDS; PLANNING; POLISHING; PROCESSING; SCATTERING; SURFACE FINISHING
Optional Information
- Notes
- 5 figs; 17 refs
- Collaborations
- Azerbaijan National Academy of Sciences, Institute of Physics, Department of Physical, Mathematical and Technical Sciences Baku (AZ)