Published 1995
| Version v1
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Recrystallization rates during solid-phase epitaxy of implant-amorphized Se1-xGex alloys
- 1. Oak Ridge National Lab., TN (United States)
- 2. Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering
Description
Short communication
Files
28071332.pdf
Files
(25.9 kB)
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Additional details
Publishing Information
- Publisher
- Accademic Press.
- Imprint Title
- Ninth international conference on ion beam modification of materials. Book of abstracts
- Imprint Pagination
- 452 p.
- Journal Page Range
- p. 11001.
- Report number
- INIS-AU--0004
Conference
- Title
- 9. international conference on ion beam modification of materials.
- Acronym
- IBMM'95
- Dates
- 5-10 Feb 1995.
- Place
- Canberra (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 28071332
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- EPITAXY; GERMANIUM ALLOYS; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; RECRYSTALLIZATION; SILICON ALLOYS; SILICON IONS; SPECTRAL REFLECTANCE
- Descriptors DEC
- ALLOYS; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; IONS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATION EFFECTS