Specificity of the electrophysical properties of elastically deformed p-type germanium

Highlights: • There is anisotropy of galvanomagnetic effects in p-Ge under strong mechanical loads. • Behavior of Hall coefficient with pressure in weak and stronger magnetic fields differs. • Fine structure of Hall coefficient field dependences smoothes out with increasing pressure. • Isoenergetic surfaces of v-zone of deformed p-Ge are not perfect revolution ellipsoids. The influence of directional elastic compression deformation on the electrophysical properties of $p$-type germanium single crystals was investigated. The dependences of the Hall coefficient on the magnetic field strength on samples of different crystallographic orientations in the absence and in the presence of uniaxial mechanical stress were measured at two temperatures (room temperature and liquid nitrogen temperature). On the same samples, the tensoresistance and longitudinal tensomagnetoresistance were studied in a wide range of mechanical stresses ($0\le X\le 1\mathrm{GPa}$). The presence of anisotropy of galvanomagnetic effects in $p$-Ge was revealed both in the absence of deformation and under very strong mechanical loads. Experiments on measuring the longitudinal tensomagnetoresistance make it possible to conclude that the isoenergetic surfaces in $p$-Ge, which arise as a result of directional elastic compression deformation, cannot be considered as perfect ellipsoids of revolution, at least in the investigated $X$ range.