Published August 2010 | Version v1
Journal article

Gold-stud bump bonding for HEP applications

  • 1. University of California Davis, Davis, CA 95616 (United States)
  • 2. University of Oregon, Eugene, OR 97403 (United States)
  • 3. SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States)

Description

Methods involved in gold-stud bump bonding of VLSI chips to solid state sensors are described. Applicability and limitations of the techniques are discussed in the context of pad size and pitch of the detection elements on the sensors. Recommendations are made for preferred surface preparation of bonding pads.

Availability note (English)

Available from http://dx.doi.org/10.1088/1748-0221/5/08/C08005

Additional details

Publishing Information

Journal Title
Journal of Instrumentation
Journal Volume
5
Journal Issue
08
Journal Page Range
p. C08005
ISSN
1748-0221

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42025217
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
BONDING; DETECTION; GOLD; HIGH ENERGY PHYSICS; SENSORS; SOLIDS; SURFACE TREATMENTS
Descriptors DEC
ELEMENTS; FABRICATION; JOINING; METALS; PHYSICS; TRANSITION ELEMENTS